DRV8106S-Q1EVM
ActiveEVAL BOARD FOR DRV8106S-Q1
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DRV8106S-Q1EVM
ActiveEVAL BOARD FOR DRV8106S-Q1
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DRV8106S-Q1EVM |
|---|---|
| Function | Gate Driver |
| Secondary Attributes | Graphical User Interface (GUI) |
| Supplied Contents | Board(s) |
| Type | Power Management |
| Utilized IC / Part | DRV8106S-Q1 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Box | 1 | $ 90.00 | |
Description
General part information
DRV8106-Q1 Series
The DRV8106-Q1 is a highly integrated half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.
The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDSand VGSmonitors.
A wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.
Documents
Technical documentation and resources
