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VQFN (RHB)
Integrated Circuits (ICs)

DRV8106SQRHBRQ1

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Texas Instruments

AUTOMOTIVE, 40V, HALF-BRIDGE SMART GATE DRIVER W/OFFLINE DIAGNOSTICS AND INLINE CURRENT SENSE AMP

VQFN (RHB)
Integrated Circuits (ICs)

DRV8106SQRHBRQ1

Active
Texas Instruments

AUTOMOTIVE, 40V, HALF-BRIDGE SMART GATE DRIVER W/OFFLINE DIAGNOSTICS AND INLINE CURRENT SENSE AMP

Technical Specifications

Parameters and characteristics for this part

SpecificationDRV8106SQRHBRQ1
Driven ConfigurationHalf-Bridge
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case32-VFQFN Exposed Pad
Supplier Device Package32-VQFN (5x5)
Voltage - Supply [Max]5.5 V
Voltage - Supply [Min]3 V

DRV8106-Q1 Series

Automotive, 40V, half-bridge smart gate driver w/offline diagnostics and inline current sense amp

PartDriven ConfigurationOperating Temperature [Max]Operating Temperature [Min]Voltage - Supply [Max]Voltage - Supply [Min]Package / CaseMounting TypeSupplier Device PackageQualificationGradeUtilized IC / PartTypeSecondary AttributesSupplied ContentsFunction
VQFN (RHB)
Texas Instruments
Half-Bridge
125 °C
-40 °C
5.5 V
3 V
32-VFQFN Exposed Pad
Surface Mount
Wettable Flank
32-VQFN (5x5)
32 VFQFN Exposed Pads
Texas Instruments
Half-Bridge
150 °C
-40 °C
5.5 V
3 V
32-VFQFN Exposed Pad
Surface Mount
Wettable Flank
32-VQFN (5x5)
AEC-Q100
Automotive
DRV8106S-Q1EVM
Texas Instruments
DRV8106S-Q1
Power Management
Graphical User Interface (GUI)
Board(s)
Gate Driver

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.73
10$ 2.45
25$ 2.11
100$ 1.74
250$ 1.55
500$ 1.44
1000$ 1.35
Digi-Reel® 1$ 3.73
10$ 2.45
25$ 2.11
100$ 1.74
250$ 1.55
500$ 1.44
1000$ 1.35
Tape & Reel (TR) 3000$ 1.16
Texas InstrumentsLARGE T&R 1$ 2.08
100$ 1.72
250$ 1.24
1000$ 0.93

Description

General part information

DRV8106-Q1 Series

The DRV8106-Q1 is a highly integrated half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.

The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDSand VGSmonitors.

A wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.