Specification	STP12NK80Z

Current - Continuous Drain (Id) @ 25°C	10.5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	87 nC
Input Capacitance (Ciss) (Max) @ Vds	2620 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	190 W
Rds On (Max) @ Id, Vgs	750 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STP12 Series

N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-220 package

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
STMicroelectronics STP12NM60N	960 pF	N-Channel	600 V	MOSFET (Metal Oxide)	Through Hole	TO-220	10 A	25 V	150 °C	-55 °C	410 mOhm	4 V	10 V	90 W	TO-220-3	30.5 nC
STMicroelectronics STP12N60M2	538 pF	N-Channel	600 V	MOSFET (Metal Oxide)	Through Hole	TO-220	9 A	25 V	150 °C	-55 °C	450 mOhm	4 V	10 V	85 W	TO-220-3	16 nC
STMicroelectronics STP12N65M5		N-Channel	650 V	MOSFET (Metal Oxide)	Through Hole	TO-220	8.5 A	25 V			430 mOhm	5 V	10 V		TO-220-3		150 °C	900 pF	22 nC	70 W
STMicroelectronics STP12NM50N		N-Channel	500 V	MOSFET (Metal Oxide)	Through Hole	TO-220	11 A	25 V	150 °C	-55 °C	380 mOhm	4 V	10 V	100 W	TO-220-3	30 nC		940 pF
STMicroelectronics STP12NK30Z		N-Channel	300 V	MOSFET (Metal Oxide)	Through Hole	TO-220	9 A	30 V	150 °C	-55 °C	400 mOhm	4.5 V	10 V	90 W	TO-220-3			670 pF	35 nC
STMicroelectronics STP12N65M2		N-Channel	650 V	MOSFET (Metal Oxide)	Through Hole	TO-220	8 A	25 V	150 °C	-55 °C	500 mOhm	4 V		85 W	TO-220-3				16.7 nC		0 V	10 V
STMicroelectronics STP12NK60Z	1740 pF	N-Channel	600 V	MOSFET (Metal Oxide)	Through Hole	TO-220	10 A	30 V			640 mOhm	4.5 V	10 V	150 W	TO-220-3	59 nC	150 °C
STMicroelectronics STP12NK80Z	2620 pF	N-Channel	800 V	MOSFET (Metal Oxide)	Through Hole	TO-220	10.5 A	30 V	150 °C	-55 °C	750 mOhm	4.5 V	10 V	190 W	TO-220-3				87 nC
STMicroelectronics STP12NM50		N-Channel	500 V	MOSFET (Metal Oxide)	Through Hole	TO-220	12 A	30 V	150 °C	-65 °C	350 mOhm	5 V	10 V		TO-220-3	39 nC		1000 pF
STMicroelectronics STP12N50M2		N-Channel	500 V	MOSFET (Metal Oxide)	Through Hole	TO-220	10 A	25 V	150 °C	-55 °C	380 mOhm	4 V	10 V	85 W	TO-220-3	15 nC		560 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 3.01
		10	$ 2.87
		25	$ 2.12
		100	$ 2.03
		500	$ 1.77
		1000	$ 1.57
Digikey	N/A	2573	$ 4.35
	Tube	1	$ 3.68
		50	$ 2.91
		100	$ 2.50
		500	$ 2.22
		1000	$ 1.90
		2000	$ 1.79
		5000	$ 1.72
Newark	Each	1	$ 4.96
		10	$ 4.38
		100	$ 2.52
		500	$ 2.27
		1000	$ 2.26
		2500	$ 2.24
		5000	$ 2.22

Description

General part information

STP12 Series

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.