Discrete Semiconductor Products

STP12N65M2

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STMicroelectronics

POWER MOSFET

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Discrete Semiconductor Products

STP12N65M2

Active

STMicroelectronics

POWER MOSFET

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP12N65M2

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	0 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.7 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	85 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STP12 Series

N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-220 package

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
STMicroelectronics STP12NM60N	960 pF	N-Channel	600 V	MOSFET (Metal Oxide)	Through Hole	TO-220	10 A	25 V	150 °C	-55 °C	410 mOhm	4 V	10 V	90 W	TO-220-3	30.5 nC
STMicroelectronics STP12N60M2	538 pF	N-Channel	600 V	MOSFET (Metal Oxide)	Through Hole	TO-220	9 A	25 V	150 °C	-55 °C	450 mOhm	4 V	10 V	85 W	TO-220-3	16 nC
STMicroelectronics STP12N65M5		N-Channel	650 V	MOSFET (Metal Oxide)	Through Hole	TO-220	8.5 A	25 V			430 mOhm	5 V	10 V		TO-220-3		150 °C	900 pF	22 nC	70 W
STMicroelectronics STP12NM50N		N-Channel	500 V	MOSFET (Metal Oxide)	Through Hole	TO-220	11 A	25 V	150 °C	-55 °C	380 mOhm	4 V	10 V	100 W	TO-220-3	30 nC		940 pF
STMicroelectronics STP12NK30Z		N-Channel	300 V	MOSFET (Metal Oxide)	Through Hole	TO-220	9 A	30 V	150 °C	-55 °C	400 mOhm	4.5 V	10 V	90 W	TO-220-3			670 pF	35 nC
STMicroelectronics STP12N65M2		N-Channel	650 V	MOSFET (Metal Oxide)	Through Hole	TO-220	8 A	25 V	150 °C	-55 °C	500 mOhm	4 V		85 W	TO-220-3				16.7 nC		0 V	10 V
STMicroelectronics STP12NK60Z	1740 pF	N-Channel	600 V	MOSFET (Metal Oxide)	Through Hole	TO-220	10 A	30 V			640 mOhm	4.5 V	10 V	150 W	TO-220-3	59 nC	150 °C
STMicroelectronics STP12NK80Z	2620 pF	N-Channel	800 V	MOSFET (Metal Oxide)	Through Hole	TO-220	10.5 A	30 V	150 °C	-55 °C	750 mOhm	4.5 V	10 V	190 W	TO-220-3				87 nC
STMicroelectronics STP12NM50		N-Channel	500 V	MOSFET (Metal Oxide)	Through Hole	TO-220	12 A	30 V	150 °C	-65 °C	350 mOhm	5 V	10 V		TO-220-3	39 nC		1000 pF
STMicroelectronics STP12N50M2		N-Channel	500 V	MOSFET (Metal Oxide)	Through Hole	TO-220	10 A	25 V	150 °C	-55 °C	380 mOhm	4 V	10 V	85 W	TO-220-3	15 nC		560 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

STP12 Series

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Documents

Technical documentation and resources