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Trans MOSFET N-CH 100V 4.8A 8-Pin Power 56 T/R
Discrete Semiconductor Products

FDMS86500DC

Active
ON Semiconductor

N-CHANNEL DUAL COOL<SUP>TM</SUP> 56 POWER TRENCH<SUP>®</SUP> MOSFET 60V, 108A, 2.3MΩ

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Trans MOSFET N-CH 100V 4.8A 8-Pin Power 56 T/R
Discrete Semiconductor Products

FDMS86500DC

Active
ON Semiconductor

N-CHANNEL DUAL COOL<SUP>TM</SUP> 56 POWER TRENCH<SUP>®</SUP> MOSFET 60V, 108A, 2.3MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS86500DC
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]107 nC
Input Capacitance (Ciss) (Max) @ Vds7680 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)125 W, 3.2 W
Rds On (Max) @ Id, Vgs [Max]2.3 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.47
10$ 2.96
100$ 2.10
500$ 1.73
1000$ 1.63
Digi-Reel® 1$ 4.47
10$ 2.96
100$ 2.10
500$ 1.73
1000$ 1.63
Tape & Reel (TR) 3000$ 1.63
NewarkEach (Supplied on Full Reel) 1$ 1.59
ON SemiconductorN/A 1$ 1.50

Description

General part information

FDMS86500DC Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance.

Documents

Technical documentation and resources