FDMS86500DC Series

N-Channel Dual CoolTM 56 Power Trench® MOSFET 60V, 108A, 2.3mΩ

Catalog

N-Channel Dual CoolTM 56 Power Trench® MOSFET 60V, 108A, 2.3mΩ

Part	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDMS86500L	N-Channel	2.5 mOhm	12530 pF	2.5 W	104 W	8-PQFN (5x6)	Surface Mount	20 V	4.5 V 10 V	8-PowerTDFN	60 V	165 nC	MOSFET (Metal Oxide)	3 V	-55 °C	150 °C	25 A 80 A
ON Semiconductor FDMS86500DC	N-Channel					8-PQFN (5x6)	Surface Mount	20 V	8 V 10 V	8-PowerTDFN	60 V		MOSFET (Metal Oxide)	4.5 V	-55 °C	150 °C		3.2 W 125 W	107 nC	7680 pF	2.3 mOhm

Catalog

N-Channel Dual CoolTM 56 Power Trench® MOSFET 60V, 108A, 2.3mΩ

Key Features

• Max rDS(on)= 2.5 mΩ at VGS= 10 V, ID= 25 A

• Max rDS(on)= 3.7 mΩ at VGS= 4.5 V, ID= 20 A

• advanced Package and Silicon combination for low rDS(on)and high efficiency

• Next generation enhanced body diode technology, engineered for soft recovery

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance.