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ONSEMI FDMS8320L
Discrete Semiconductor Products

FDMS86500L

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ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 158A, 2.5MΩ

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ONSEMI FDMS8320L
Discrete Semiconductor Products

FDMS86500L

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60V, 158A, 2.5MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS86500L
Current - Continuous Drain (Id) @ 25°C25 A, 80 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs165 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]12530 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W
Power Dissipation (Max)104 W
Rds On (Max) @ Id, Vgs2.5 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.36
10$ 2.19
100$ 1.53
500$ 1.24
1000$ 1.15
Digi-Reel® 1$ 3.36
10$ 2.19
100$ 1.53
500$ 1.24
1000$ 1.15
Tape & Reel (TR) 3000$ 1.10
NewarkEach (Supplied on Full Reel) 3000$ 1.95
ON SemiconductorN/A 1$ 1.02

Description

General part information

FDMS86500DC Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance.