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Discrete Semiconductor Products
ICPB1005-1-110I
ActiveMicrochip Technology
DC-14 GHZ 25W DISCRETE GAN HEMT
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DocumentsICPB1005 GaN HEMT 25W
Discrete Semiconductor Products
ICPB1005-1-110I
ActiveMicrochip Technology
DC-14 GHZ 25W DISCRETE GAN HEMT
Deep-Dive with AI
DocumentsICPB1005 GaN HEMT 25W
Technical Specifications
Parameters and characteristics for this part
| Specification | ICPB1005-1-110I |
|---|---|
| Current - Test | 250 mA |
| Current Rating (Amps) | 2 A |
| Frequency | 14 GHz |
| Gain | 6.4 dBi |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Power - Output | 25 W |
| Supplier Device Package | Die |
| Technology | GaN HEMT |
| Voltage - Rated | 28 V |
| Voltage - Test | 28 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Box | 1 | $ 124.80 | |
| 25 | $ 84.00 | |||
| 100 | $ 75.00 | |||
| Microchip Direct | BOX | 1 | $ 124.80 | |
| 5 | $ 107.40 | |||
| 10 | $ 94.20 | |||
| 25 | $ 84.00 | |||
| 50 | $ 76.80 | |||
| 100 | $ 70.80 | |||
| 250 | $ 66.60 | |||
| 500 | $ 64.20 | |||
| 1000 | $ 63.00 | |||
Description
General part information
ICPB1005-Power-Transistor Series
The ICPB1005 is a 0.25μm GaN SiC discrete HEMT that operates from DC-14GHz, and provides in excess of 35 Watts of saturated output power up to 10GHz. The design is optimized for power and efficiency using field plate technology. The device provides 45.5dBm Nominal P3dB with a maximum PAE of 70% at 6 GHz.
Documents
Technical documentation and resources