Catalog
GaN Power Transistor, 25 Watt
Key Features
- Frequency Range DC-14GHz
- 45.5 dBm (25 Watts) Nominal P3dB
- Maximum PAE at 6GHz of 70%
- 8dB Linear Gain at 6GHz
- Drain Bias 28V
- Technology: 0.25μm GaN on SiC
- Lead-free and RoHS compliant
- Chip Dimensions: 0.824 x 1.44 x 0.10mm
Description
AI
The ICPB1005 is a 0.25μm GaN SiC discrete HEMT that operates from DC-14GHz, and provides in excess of 35 Watts of saturated output power up to 10GHz. The design is optimized for power and efficiency using field plate technology. The device provides 45.5dBm Nominal P3dB with a maximum PAE of 70% at 6 GHz.