SCT10N120
LTBSILICON CARBIDE POWER MOSFET 1200 V, 12 A, 520 MOHM (TYP., TJ = 150 C) IN AN HIP247 PACKAGE
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SCT10N120
LTBSILICON CARBIDE POWER MOSFET 1200 V, 12 A, 520 MOHM (TYP., TJ = 150 C) IN AN HIP247 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCT10N120 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 290 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 ░C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 690 mOhm |
| Supplier Device Package | HiP247™ |
| Vgs (Max) [Max] | 25 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT10N120 Series
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Documents
Technical documentation and resources