SCT10N120 Series

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

Catalog

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

Part	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max) [Max]	Vgs (Max) [Min]	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type
STMicroelectronics SCT10N120	200 °C	-55 ░C	22 nC	290 pF	TO-247-3	12 A	690 mOhm	N-Channel	1.2 kV	150 W	25 V	-10 V	3.5 V	HiP247™	Through Hole

Catalog

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.