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TO-247-3
Discrete Semiconductor Products

NGTB40N60IHLWG

Obsolete
ON Semiconductor

IGBT, FIELD STOP (FS), 40 A, 600 V

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TO-247-3
Discrete Semiconductor Products

NGTB40N60IHLWG

Obsolete
ON Semiconductor

IGBT, FIELD STOP (FS), 40 A, 600 V

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNGTB40N60IHLWG
Current - Collector (Ic) (Max) [Max]80 A
Current - Collector Pulsed (Icm)200 A
Gate Charge130 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]250 W
Reverse Recovery Time (trr)400 ns
Supplier Device PackageTO-247-3
Switching Energy400 µJ
Td (on/off) @ 25°C70 ns, 140 ns
Test Condition10 Ohm, 40 A, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NGTB40N60IHLWG Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.