
NGTB40N60IHLWG
ObsoleteIGBT, FIELD STOP (FS), 40 A, 600 V

NGTB40N60IHLWG
ObsoleteIGBT, FIELD STOP (FS), 40 A, 600 V
Technical Specifications
Parameters and characteristics for this part
| Specification | NGTB40N60IHLWG |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Gate Charge | 130 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 250 W |
| Reverse Recovery Time (trr) | 400 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 400 µJ |
| Td (on/off) @ 25°C | 70 ns, 140 ns |
| Test Condition | 10 Ohm, 40 A, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NGTB40N60IHLWG Series
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.
Documents
Technical documentation and resources