
NGTB40N120FL3WG
ActiveIGBT 1200V 40A FS3 SOLAR/UPS/ TUBE

NGTB40N120FL3WG
ActiveIGBT 1200V 40A FS3 SOLAR/UPS/ TUBE
Technical Specifications
Parameters and characteristics for this part
| Specification | NGTB40N120FL3WG |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 160 A |
| Gate Charge | 212 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 454 W |
| Reverse Recovery Time (trr) | 136 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 1.6 mJ, 1.1 mJ |
| Td (on/off) @ 25°C | 145 ns, 18 ns |
| Test Condition | 40 A, 15 V, 600 V, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
NGTB40N60IHLWG Series
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.
Documents
Technical documentation and resources