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TO-247-3
Discrete Semiconductor Products

NGTB40N120FL3WG

Active
ON Semiconductor

IGBT 1200V 40A FS3 SOLAR/UPS/ TUBE

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TO-247-3
Discrete Semiconductor Products

NGTB40N120FL3WG

Active
ON Semiconductor

IGBT 1200V 40A FS3 SOLAR/UPS/ TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNGTB40N120FL3WG
Current - Collector (Ic) (Max) [Max]160 A
Gate Charge212 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]454 W
Reverse Recovery Time (trr)136 ns
Supplier Device PackageTO-247-3
Switching Energy1.6 mJ, 1.1 mJ
Td (on/off) @ 25°C145 ns, 18 ns
Test Condition40 A, 15 V, 600 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.99
10$ 4.72
100$ 3.43
500$ 2.88
1000$ 2.84
NewarkEach 50$ 4.30
100$ 3.74
250$ 3.12
500$ 3.03

Description

General part information

NGTB40N60IHLWG Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.

Documents

Technical documentation and resources