NGTB40N60IHLWG Series

IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A

Catalog

IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A

Part	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Switching Energy	Current - Collector Pulsed (Icm)	Package / Case	Gate Charge	Current - Collector (Ic) (Max) [Max]	Mounting Type	Test Condition	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor NGTB40N120IHLWG	360 ns	-	1.4 mJ	320 A	TO-247-3	420 nC	80 A	Through Hole	10 Ohm 15 V 40 A 600 V	TO-247-3	2.35 V	1200 V	Trench Field Stop	260 W	-55 °C	150 °C
ON Semiconductor NGTB40N120IHRWG	230 ns		950 µJ	120 A	TO-247-3	225 nC	80 A	Through Hole	10 Ohm 15 V 40 A 600 V	TO-247	2.55 V	1200 V	Trench Field Stop	384 W	-40 C	175 °C
ON Semiconductor NGTB40N120FL2WG	116 ns 286 ns		1.1 mJ 3.4 mJ	200 A	TO-247-3	313 nC	80 A	Through Hole	10 Ohm 15 V 40 A 600 V	TO-247	2.4 V	1200 V	Trench Field Stop	535 W	-55 °C	175 ░C	240 ns
ON Semiconductor NGTB40N120LWG			1.4 mJ 5.5 mJ	320 A	TO-247-3	420 nC	80 A	Through Hole	10 Ohm 15 V 40 A 600 V	TO-247-3	2.35 V	1200 V	Trench Field Stop	260 W	-55 °C	150 °C		140 ns 360 ns
ON Semiconductor NGTB40N120FL3WG			1.1 mJ 1.6 mJ		TO-247-3	212 nC	160 A	Through Hole	10 Ohm 15 V 40 A 600 V	TO-247-3	2.3 V	1200 V	Trench Field Stop	454 W	-55 °C	175 ░C	136 ns	18 ns 145 ns
ON Semiconductor NGTB40N60L2WG			1.17 mJ 280 µJ		TO-247-3	228 nC	80 A	Through Hole	10 Ohm 15 V 40 A 400 V	TO-247-3	2.61 V	600 V	Trench Field Stop	417 W	-55 °C	175 ░C	73 ns
ON Semiconductor NGTB40N60IHLWG			400 µJ	200 A	TO-247-3	130 nC	80 A	Through Hole	10 Ohm 15 V 40 A 400 V	TO-247-3	2.4 V	600 V	Trench Field Stop	250 W	-55 °C	150 °C	400 ns	70 ns 140 ns
ON Semiconductor NGTB40N120FLWG			1.6 mJ 2.6 mJ		TO-247-3	415 nC	80 A	Through Hole	10 Ohm 15 V 40 A 600 V	TO-247-3	2.2 V	1200 V	Trench Field Stop	260 W	-55 °C	150 °C	200 ns	130 ns	385 ns
ON Semiconductor NGTB40N65IHRWG			420 µJ		TO-247-3	190 nC	80 A	Through Hole	10 Ohm 15 V 40 A 400 V	TO-247-3	1.7 V		Field Stop	405 W	-40 C	175 °C				650 V
ON Semiconductor NGTB40N65IHL2WG			360 µJ		TO-247-3	135 nC	80 A	Through Hole	10 Ohm 15 V 40 A 400 V	TO-247-3	2.2 V		Trench Field Stop	300 W	-55 °C	175 ░C	465 ns			650 V

Catalog

IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A

Key Features

• Extremely Efficient Trench with Fieldstop Technology

• Low Conduction Loss Design for Soft Switching Application

• Reduced Power Dissipation in Induction Heating

• Reliable and Cost Effective Single Die Solution

• This is a Pb-Free Device

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.