JAN2N3250A
ActivePNP SILICON SWITCHING -60V, -0.2A
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JAN2N3250A
ActivePNP SILICON SWITCHING -60V, -0.2A
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Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N3250A |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 200 mA |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 50 hFE |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 360 mW |
| Qualification | MIL-PRF-19500/323 |
| Supplier Device Package | TO-39 (TO-205AD) |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 166.42 | |
Description
General part information
JANTX2N3250A-Transistor Series
This specification covers the performance requirements for PNP silicon switching 2N3250A and 2N3251A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/323 and two levels of product assurance (JANHC, JANKC) are provided for the unencapulated die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.
Documents
Technical documentation and resources
