JANTX2N3250A-Transistor Series

PNP Silicon Switching -60V, -0.2A

Catalog

PNP Silicon Switching -60V, -0.2A

Part	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Qualification	Supplier Device Package	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type
Microchip Technology JANTX2N3250A	Through Hole	500 mV	TO-205AD TO-39-3 Metal Can	360 mW	60 V	MIL-PRF-19500/323	TO-39 (TO-205AD)	Military	50 hFE	10 µA	200 mA	PNP
Microchip Technology JAN2N3250A	Through Hole	500 mV	TO-205AD TO-39-3 Metal Can	360 mW	60 V	MIL-PRF-19500/323	TO-39 (TO-205AD)	Military	50 hFE	10 µA	200 mA	PNP

Catalog

PNP Silicon Switching -60V, -0.2A

Key Features

- The device packages for the encapsulated device types are as follows: TO-18 and UB, surface mount.

- The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/323.

Description

This specification covers the performance requirements for PNP silicon switching 2N3250A and 2N3251A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/323 and two levels of product assurance (JANHC, JANKC) are provided for the unencapulated die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.