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TO-247-3 AD EP
Discrete Semiconductor Products

FCH104N60F

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, FRFET<SUP>®</SUP>, 600 V, 37 A, 104 MΩ, TO-247

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TO-247-3 AD EP
Discrete Semiconductor Products

FCH104N60F

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, FRFET<SUP>®</SUP>, 600 V, 37 A, 104 MΩ, TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationFCH104N60F
Current - Continuous Drain (Id) @ 25°C37 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs139 nC
Input Capacitance (Ciss) (Max) @ Vds5950 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)357 W
Rds On (Max) @ Id, Vgs [Max]104 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.71
10$ 3.88
100$ 3.47
NewarkEach 250$ 3.80
500$ 3.69
ON SemiconductorN/A 1$ 3.19

Description

General part information

FCH104N60F_F085 Series

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.