FCH104N60F_F085 Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-247

Part	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Grade	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FCH104N60F-F085	AEC-Q101	-55 °C	150 °C	37 A	20 V	357 W	TO-247-3	600 V	MOSFET (Metal Oxide)	4302 pF	TO-247-3	104 mOhm	Automotive	5 V	10 V	Through Hole	N-Channel	139 nC
ON Semiconductor FCH104N60F		-55 °C	150 °C	37 A	20 V	357 W	TO-247-3	600 V	MOSFET (Metal Oxide)	5950 pF	TO-247-3	104 mOhm		5 V	10 V	Through Hole	N-Channel	139 nC

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-247

Key Features

• Typical RDS(on)= 91 mΩ at VGS= 10 V, ID= 18.5 A

• Typical Qg(tot)= 109 nC at VGS= 10V, ID= 18.5 A

• UIS Capability

• Qualified to AEC Q101

• RoHS Compliant

Description

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.