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TO-247-3 AD EP
Discrete Semiconductor Products

FCH104N60F-F085

NRND
ON Semiconductor

600V, 37A, 91M , TO-247<BR>N-CHANNEL SUPERFET II / TUBE

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TO-247-3 AD EP
Discrete Semiconductor Products

FCH104N60F-F085

NRND
ON Semiconductor

600V, 37A, 91M , TO-247<BR>N-CHANNEL SUPERFET II / TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFCH104N60F-F085
Current - Continuous Drain (Id) @ 25°C37 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs139 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds4302 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)357 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]104 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.03
30$ 4.82
120$ 4.31
510$ 3.80
1020$ 3.42
2010$ 3.21
NewarkEach 250$ 3.52
500$ 3.42
ON SemiconductorN/A 1$ 4.46

Description

General part information

FCH104N60F_F085 Series

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.