Specification	HUFA75852G3-F085

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	480 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	7690 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	500 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

HUF75852G3_F085 Series

N-Channel UltraFET<sup>®</sup> Power MOSFET 150V, 75A, 13mΩ

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Qualification	Grade
ON Semiconductor HUFA75307D3S	Surface Mount	15 A	250 pF	10 V	N-Channel	90 mOhm	TO-252 (DPAK)	45 W	55 V	20 nC	4 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V
ON Semiconductor HUFA75617D3ST	Surface Mount	16 A	570 pF	10 V	N-Channel	90 mOhm	TO-252AA	64 W	100 V		4 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	39 nC
ON Semiconductor HUFA75337S3ST	Surface Mount	75 A	1775 pF	10 V	N-Channel	14 mOhm	TO-263 (D2PAK)		55 V	109 nC	4 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V		175 W
ON Semiconductor HUFA75345S3ST	Surface Mount	75 A	4000 pF	10 V	N-Channel	7 mOhm	TO-263 (D2PAK)	325 W	55 V		4 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	275 nC
ON Semiconductor HUFA75339P3	Through Hole	75 A		10 V	N-Channel	12 mOhm	TO-220-3	200 W	55 V		4 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-220-3	20 V	130 nC
ON Semiconductor HUFA75307D3	Through Hole	15 A	250 pF	10 V	N-Channel	90 mOhm	IPAK	45 W	55 V	20 nC	4 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	20 V
ON Semiconductor HUFA75339P3	Through Hole	75 A		10 V	N-Channel	12 mOhm	TO-220-3	200 W	55 V		4 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-220-3	20 V	130 nC
ON Semiconductor HUFA75329S3S	Surface Mount	49 A	1060 pF	10 V	N-Channel	24 mOhm	TO-263 (D2PAK)		55 V	75 nC	4 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V		128 W
ON Semiconductor HUFA75852G3-F085	Through Hole	75 A	7690 pF	10 V	N-Channel	16 mOhm	TO-247-3	500 W	150 V		4 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-247-3	20 V	480 nC		AEC-Q101	Automotive
ON Semiconductor HUFA75321P3	Through Hole	35 A	680 pF	10 V	N-Channel	34 mOhm	TO-220-3	93 W	55 V	44 nC	4 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-220-3	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	97	$ 3.12
LCSC	Piece	1	$ 3.18
		200	$ 1.23
		500	$ 1.19
		1000	$ 1.17

Description

General part information

HUF75852G3_F085 Series

These N-Channel power MOSFETs are manufactured using the innovative UltraFET®process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drives, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75321

Documents

Technical documentation and resources

Package Drawing-340CK-TO-247-3LD SHORT LEAD

Package Drawing