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Discrete Semiconductor Products

HUFA75307D3

Obsolete
ON Semiconductor

MOSFET N-CH 55V 15A IPAK

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I-PAK
Discrete Semiconductor Products

HUFA75307D3

Obsolete
ON Semiconductor

MOSFET N-CH 55V 15A IPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationHUFA75307D3
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC
Input Capacitance (Ciss) (Max) @ Vds250 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)45 W
Rds On (Max) @ Id, Vgs90 mOhm
Supplier Device PackageIPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

HUF75852G3_F085 Series

These N-Channel power MOSFETs are manufactured using the innovative UltraFET®process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drives, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75321

Documents

Technical documentation and resources