Zenode.ai Logo
Beta
TO-263
Discrete Semiconductor Products

HUFA75329S3S

Obsolete
ON Semiconductor

MOSFET N-CH 55V 49A D2PAK

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
TO-263
Discrete Semiconductor Products

HUFA75329S3S

Obsolete
ON Semiconductor

MOSFET N-CH 55V 49A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationHUFA75329S3S
Current - Continuous Drain (Id) @ 25°C49 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs75 nC
Input Capacitance (Ciss) (Max) @ Vds1060 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]128 W
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

HUF75852G3_F085 Series

These N-Channel power MOSFETs are manufactured using the innovative UltraFET®process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drives, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75321

Documents

Technical documentation and resources