MSCSM170HRM075NG

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1700V, 5.8 MOHM, SP6C, T-TYPE MSIC™ MOSFET MODULE

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Discrete Semiconductor Products

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1700V, 5.8 MOHM, SP6C, T-TYPE MSIC™ MOSFET MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	MSCSM170HRM075NG

Configuration	4 N-Channel (Three Level Inverter)
Current - Continuous Drain (Id) @ 25°C	337 A, 317 A
Drain to Source Voltage (Vdss)	1.7 kV, 1.2 kV
Drain to Source Voltage (Vdss)	1200 V, 1700 V
Gate Charge (Qg) (Max) @ Vgs	928 nC, 1068 nC
Input Capacitance (Ciss) (Max) @ Vds	19800 pF, 12100 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	1.492 kW
Rds On (Max) @ Id, Vgs	7.8 mOhm, 7.5 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	2.8 V, 3.2 V

1700V, 5.8 mOhm, SP6C, T-Type mSiC™ MOSFET Module

Part	Technology	Package / Case	Configuration	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Power - Max [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology MSCSM170HRM075NG	Silicon Carbide (SiC)	Module	4 N-Channel (Three Level Inverter)	2.8 V 3.2 V	317 A 337 A	7.5 mOhm 7.8 mOhm	12100 pF 19800 pF	1.2 kV 1.7 kV	1200 V 1700 V	1.492 kW	Chassis Mount	928 nC 1068 nC	-40 C	175 °C

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General part information

• SiC Power MOSFET

- Low RDS(on)

- High temperature performance

Technical documentation and resources