MSCSM170HRM075NG-Module Series

1700V, 5.8 mOhm, SP6C, T-Type mSiC™ MOSFET Module

Catalog

1700V, 5.8 mOhm, SP6C, T-Type mSiC™ MOSFET Module

Part	Technology	Package / Case	Configuration	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Power - Max [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology MSCSM170HRM075NG	Silicon Carbide (SiC)	Module	4 N-Channel (Three Level Inverter)	2.8 V 3.2 V	317 A 337 A	7.5 mOhm 7.8 mOhm	12100 pF 19800 pF	1.2 kV 1.7 kV	1200 V 1700 V	1.492 kW	Chassis Mount	928 nC 1068 nC	-40 C	175 °C

Catalog

1700V, 5.8 mOhm, SP6C, T-Type mSiC™ MOSFET Module

Key Features

- • Configuration: T-type

- • VDSS (V): 1700

- • RDSon (mR) typ: 5.8

- • Current (A) Tc=80C: 268

- • Silicon Type: SiC MOSFET

- • Package Type: SP6C

Description

• SiC Power MOSFET - Low RDS(on) - High temperature performance • Kelvin source for easy drive • Low stray inductance • High efficiency converter • Outstanding performance at high frequency operation • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant