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LFPAK8
Discrete Semiconductor Products

NTMJS1D2N04CLTWG

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ON Semiconductor

POWER MOSFET 40 V, 1.2 MOHMS, 237 A, SINGLE N-CHANNEL

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LFPAK8
Discrete Semiconductor Products

NTMJS1D2N04CLTWG

Active
ON Semiconductor

POWER MOSFET 40 V, 1.2 MOHMS, 237 A, SINGLE N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMJS1D2N04CLTWG
Current - Continuous Drain (Id) @ 25°C41 A, 237 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs93 nC
Input Capacitance (Ciss) (Max) @ Vds5600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-LFPAK56, SOT-1205
Power Dissipation (Max)3.8 W, 128 W
Rds On (Max) @ Id, Vgs1.2 mOhm
Supplier Device Package8-LFPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.66
10$ 2.40
100$ 1.68
500$ 1.37
1000$ 1.27
Digi-Reel® 1$ 3.66
10$ 2.40
100$ 1.68
500$ 1.37
1000$ 1.27
Tape & Reel (TR) 3000$ 1.24
NewarkEach (Supplied on Full Reel) 2500$ 1.34
5000$ 1.30
ON SemiconductorN/A 1$ 0.73

Description

General part information

NTMJS1D6N06CL Series

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.