NTMJS1D6N06CL Series

Power MOSFET 60 V, 1.36 mOhms, 250 A, Single N-Channel

Catalog

Power MOSFET 60 V, 1.36 mOhms, 250 A, Single N-Channel

Part	Vgs (Max)	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]
ON Semiconductor NTMJS1D2N04CLTWG	20 V	8-LFPAK56 SOT-1205	N-Channel	-55 °C	175 ░C	40 V	Surface Mount	8-LFPAK	MOSFET (Metal Oxide)	1.2 mOhm	2 V	5600 pF	41 A 237 A	4.5 V 10 V	3.8 W 128 W	93 nC
ON Semiconductor NTMJS1D0N04CTWG	20 V	8-LFPAK56 SOT-1205	N-Channel	-55 °C	175 ░C	40 V	Surface Mount	8-LFPAK	MOSFET (Metal Oxide)	0.92 mOhm	3.5 V	6100 pF	46 A 300 A	10 V	3.9 W 166 W		86 nC
ON Semiconductor NTMJS1D5N04CLTWG	20 V	8-LFPAK56 SOT-1205	N-Channel	-55 °C	175 ░C	40 V	Surface Mount	8-LFPAK	MOSFET (Metal Oxide)	1.4 mOhm	2 V	4300 pF	38 A 200 A	4.5 V 10 V			70 nC
ON Semiconductor NTMJS1D3N04CTWG	20 V	8-LFPAK56 SOT-1205	N-Channel	-55 °C	175 ░C	40 V	Surface Mount	8-LFPAK	MOSFET (Metal Oxide)	1.3 mOhm	3.5 V	4300 pF	41 A 235 A	10 V	3.8 W 128 W		65 nC
ON Semiconductor NTMJS1D6N06CLTWG	20 V	8-LFPAK56 SOT-1205	N-Channel	-55 °C	175 ░C	60 V	Surface Mount	8-LFPAK	MOSFET (Metal Oxide)	1.36 mOhm	2 V	6660 pF	38 A 250 A	4.5 V 10 V	3.8 W 167 W			91 nC

Power MOSFET 60 V, 1.36 mOhms, 250 A, Single N-Channel

• Ultra Low RDS-on

• LFPAK-E Package

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.