
Discrete Semiconductor Products
NTMJS1D6N06CLTWG
ActiveON Semiconductor
POWER MOSFET 60 V, 1.36 MOHMS, 250 A, SINGLE N-CHANNEL
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Discrete Semiconductor Products
NTMJS1D6N06CLTWG
ActiveON Semiconductor
POWER MOSFET 60 V, 1.36 MOHMS, 250 A, SINGLE N-CHANNEL
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NTMJS1D6N06CLTWG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 38 A, 250 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] [custom] | 91 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6660 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-LFPAK56, SOT-1205 |
| Power Dissipation (Max) | 3.8 W, 167 W |
| Rds On (Max) @ Id, Vgs | 1.36 mOhm |
| Supplier Device Package | 8-LFPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 4.24 | |
| 10 | $ 2.80 | |||
| 100 | $ 1.98 | |||
| 500 | $ 1.63 | |||
| 1000 | $ 1.52 | |||
| Digi-Reel® | 1 | $ 4.24 | ||
| 10 | $ 2.80 | |||
| 100 | $ 1.98 | |||
| 500 | $ 1.63 | |||
| 1000 | $ 1.52 | |||
| Tape & Reel (TR) | 3000 | $ 1.52 | ||
| Newark | Each (Supplied on Full Reel) | 500 | $ 0.97 | |
| ON Semiconductor | N/A | 1 | $ 0.84 | |
Description
General part information
NTMJS1D6N06CL Series
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Documents
Technical documentation and resources