Discrete Semiconductor Products

SIR638ADP-T1-RE3

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MOSFET N-CH 40V 100A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 40V 100A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR638ADP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	165 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	9100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	0.88 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.3 V

Part	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SIR638DP-T1-GE3	N-Channel	Surface Mount	2.3 V	4.5 V 10 V	204 nC	40 V	-55 °C	150 °C	100 A	0.88 mOhm	104 W	10500 pF	MOSFET (Metal Oxide)	PowerPAK® SO-8	-16 V 20 V	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SIR638ADP-T1-RE3	N-Channel	Surface Mount	2.3 V	4.5 V 10 V	165 nC	40 V	-55 °C	150 °C	100 A	0.88 mOhm	104 W		MOSFET (Metal Oxide)	PowerPAK® SO-8	-16 V 20 V	PowerPAK® SO-8	9100 pF
Vishay General Semiconductor - Diodes Division SIR638DP-T1-RE3	N-Channel	Surface Mount	2.3 V	4.5 V 10 V	204 nC	40 V	-55 °C	150 °C	100 A	0.88 mOhm	104 W	10500 pF	MOSFET (Metal Oxide)	PowerPAK® SO-8	-16 V 20 V	PowerPAK® SO-8

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General part information

N-Channel 40 V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources