SIR638 Series

Catalog

POWER MOSFET, N CHANNEL, 40 V, 100 A, 730 ΜOHM, POWERPAK SO, SURFACE MOUNT

Part	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SIR638DP-T1-GE3	N-Channel	Surface Mount	2.3 V	4.5 V 10 V	204 nC	40 V	-55 °C	150 °C	100 A	0.88 mOhm	104 W	10500 pF	MOSFET (Metal Oxide)	PowerPAK® SO-8	-16 V 20 V	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SIR638ADP-T1-RE3	N-Channel	Surface Mount	2.3 V	4.5 V 10 V	165 nC	40 V	-55 °C	150 °C	100 A	0.88 mOhm	104 W		MOSFET (Metal Oxide)	PowerPAK® SO-8	-16 V 20 V	PowerPAK® SO-8	9100 pF
Vishay General Semiconductor - Diodes Division SIR638DP-T1-RE3	N-Channel	Surface Mount	2.3 V	4.5 V 10 V	204 nC	40 V	-55 °C	150 °C	100 A	0.88 mOhm	104 W	10500 pF	MOSFET (Metal Oxide)	PowerPAK® SO-8	-16 V 20 V	PowerPAK® SO-8