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PowerPAK SO-8
Discrete Semiconductor Products

SIR638DP-T1-GE3

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Vishay General Semiconductor - Diodes Division

POWER MOSFET, N CHANNEL, 40 V, 100 A, 730 ΜOHM, POWERPAK SO, SURFACE MOUNT

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PowerPAK SO-8
Discrete Semiconductor Products

SIR638DP-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

POWER MOSFET, N CHANNEL, 40 V, 100 A, 730 ΜOHM, POWERPAK SO, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSIR638DP-T1-GE3
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs204 nC
Input Capacitance (Ciss) (Max) @ Vds10500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)104 W
Rds On (Max) @ Id, Vgs0.88 mOhm
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-16 V, 20 V
Vgs(th) (Max) @ Id2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.59
10$ 1.32
100$ 1.05
500$ 0.89
1000$ 0.76
Digi-Reel® 1$ 1.59
10$ 1.32
100$ 1.05
500$ 0.89
1000$ 0.76
Tape & Reel (TR) 3000$ 0.72
6000$ 0.69
9000$ 0.67

Description

General part information

SIR638 Series

N-Channel 40 V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8