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4-UDFN
Discrete Semiconductor Products

NSR2030QMUTWG

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ON Semiconductor

RECTIFIER BRIDGE DIODE SINGLE 30V 2A 4-PIN UDFN EP T/R

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4-UDFN
Discrete Semiconductor Products

NSR2030QMUTWG

Active
ON Semiconductor

RECTIFIER BRIDGE DIODE SINGLE 30V 2A 4-PIN UDFN EP T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNSR2030QMUTWG
Current - Average Rectified (Io)2 A
Current - Reverse Leakage @ Vr20 µA
Diode TypeSingle Phase
Mounting TypeSurface Mount
Operating Temperature125 ¯C
Package / Case4-UDFN Exposed Pad
Supplier Device Package4-UDFN (3.5x3.5)
TechnologySchottky
Voltage - Forward (Vf) (Max) @ If650 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.34
10$ 0.85
100$ 0.56
500$ 0.44
1000$ 0.40
Digi-Reel® 1$ 1.34
10$ 0.85
100$ 0.56
500$ 0.44
1000$ 0.40
Tape & Reel (TR) 3000$ 0.35
6000$ 0.32
9000$ 0.31
15000$ 0.30
NewarkEach (Supplied on Full Reel) 3000$ 0.40
6000$ 0.37
12000$ 0.35
18000$ 0.33
30000$ 0.31
ON SemiconductorN/A 1$ 0.32

Description

General part information

NSR2030QMU Series

These full wave bridge, using Schottky barrier diodes, are designed for the rectification of the high speed signal of wireless charging. The NSR2030QMUTWG has a very low forward voltage that will reduce conduction loss. It is housed in a UDFN 3.5 x 3.5 x 0.5 mm package that is ideal for space constrained wireless applications.