Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | NSR2030QMUTAG |
|---|---|
| Current - Average Rectified (Io) | 2 A |
| Current - Reverse Leakage @ Vr | 20 µA |
| Diode Type | Single Phase |
| Mounting Type | Surface Mount |
| Operating Temperature | 125 ¯C |
| Package / Case | 4-UDFN Exposed Pad |
| Supplier Device Package | 4-UDFN (3.5x3.5) |
| Technology | Schottky |
| Voltage - Forward (Vf) (Max) @ If | 650 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.87 | |
| Digi-Reel® | 1 | $ 0.87 | ||
Description
General part information
NSR2030QMU Series
These full wave bridge, using Schottky barrier diodes, are designed for the rectification of the high speed signal of wireless charging. The NSR2030QMUTWG has a very low forward voltage that will reduce conduction loss. It is housed in a UDFN 3.5 x 3.5 x 0.5 mm package that is ideal for space constrained wireless applications.
Documents
Technical documentation and resources