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PowerPAK SO-8
Discrete Semiconductor Products

SIR878BDP-T1-RE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 12A/42.5A PPAK

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PowerPAK SO-8
Discrete Semiconductor Products

SIR878BDP-T1-RE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 12A/42.5A PPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIR878BDP-T1-RE3
Current - Continuous Drain (Id) @ 25°C12 A, 42.5 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]38 nC
Input Capacitance (Ciss) (Max) @ Vds1850 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)62.5 W, 5 W
Rds On (Max) @ Id, Vgs14.4 mOhm
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.63
10$ 1.34
100$ 1.04
500$ 0.88
1000$ 0.72
Digi-Reel® 1$ 1.63
10$ 1.34
100$ 1.04
500$ 0.88
1000$ 0.72
Tape & Reel (TR) 3000$ 0.68
6000$ 0.64
9000$ 0.61

Description

General part information

SIR878 Series

N-Channel 100 V 12A (Ta), 42.5A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8

Documents

Technical documentation and resources