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PowerPAK SO-8
Discrete Semiconductor Products

SIR878ADP-T1-GE3

Obsolete

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DocumentsDatasheet
PowerPAK SO-8
Discrete Semiconductor Products

SIR878ADP-T1-GE3

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIR878ADP-T1-GE3
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC
Input Capacitance (Ciss) (Max) @ Vds1275 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)44.5 W, 5 W
Rds On (Max) @ Id, Vgs [Max]14 mOhm
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SIR878 Series

N-Channel 100 V 40A (Tc) 5W (Ta), 44.5W (Tc) Surface Mount PowerPAK® SO-8

Documents

Technical documentation and resources