SIR878 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 100V 40A PPAK SO-8
| Part | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Mounting Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | FET Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 100 V | MOSFET (Metal Oxide) | 1275 pF | 2.8 V | Surface Mount | PowerPAK® SO-8 | -55 °C | 150 °C | PowerPAK® SO-8 | 4.5 V 10 V | 42 nC | 5 W 44.5 W | 14 mOhm | N-Channel | 20 V | |||||
Vishay General Semiconductor - Diodes Division | 100 V | MOSFET (Metal Oxide) | 1850 pF | 3.4 V | Surface Mount | PowerPAK® SO-8 | -55 °C | 150 °C | PowerPAK® SO-8 | 5 W 62.5 W | N-Channel | 20 V | 10 V | 7.5 V | 12 A 42.5 A | 38 nC | 14.4 mOhm |