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Technical Specifications
Parameters and characteristics for this part
| Specification | ATSAMG55G19B-UUT |
|---|---|
| Core Processor | ARM® Cortex®-M4 |
| Core Size | 32-Bit Single-Core |
| Data Converters [custom] | 12 b |
| Data Converters [custom] | 8 |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Oscillator Type | Internal |
| Package / Case | WLCSP, 49-UFBGA |
| Peripherals | I2S, WDT, POR, DMA, PWM |
| Program Memory Size | 512 KB |
| Program Memory Type | FLASH |
| RAM Size | 176 K |
| Speed | 120 MHz |
| Supplier Device Package | 49-WLCSP (2.84x2.84) |
| Voltage - Supply (Vcc/Vdd) [Max] | 3.6 V |
| Voltage - Supply (Vcc/Vdd) [Min] | 1.62 V |
| Part | RAM Size | Data Converters [custom] | Data Converters [custom] | Core Size | Program Memory Type | Voltage - Supply (Vcc/Vdd) [Max] | Voltage - Supply (Vcc/Vdd) [Min] | Speed | Supplier Device Package | Peripherals | Package / Case | Core Processor | Mounting Type | Program Memory Size | Oscillator Type | Operating Temperature [Max] | Operating Temperature [Min] | Number of I/O |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | 176 K | 12 b | 8 | 32-Bit Single-Core | FLASH | 3.6 V | 1.62 V | 120 MHz | 49-WLCSP (2.84x2.84) | DMA I2S POR PWM WDT | 49-UFBGA WLCSP | ARM® Cortex®-M4 | Surface Mount | 512 KB | Internal | 85 °C | -40 °C | |
 Microchip Technology | 176 K | 12 b | 8 | 32-Bit Single-Core | FLASH | 3.6 V | 1.62 V | 120 MHz | 64-QFN (7.5x7.5) | DMA I2S POR PWM WDT | 64-VFQFN Exposed Pad | ARM® Cortex®-M4 | Surface Mount | 512 KB | Internal | 85 °C | -40 °C | 48 |
 Microchip Technology | 176 K | 12 b | 8 | 32-Bit Single-Core | FLASH | 3.6 V | 1.62 V | 120 MHz | 64-LQFP (10x10) | DMA I2S POR PWM WDT | 64-LQFP | ARM® Cortex®-M4 | Surface Mount | 512 KB | Internal | 85 °C | -40 °C | 48 |
 Microchip Technology | 176 K | 12 b | 8 | 32-Bit Single-Core | FLASH | 3.6 V | 1.62 V | 120 MHz | 49-WLCSP (2.84x2.84) | DMA I2S POR PWM WDT | 49-UFBGA WLCSP | ARM® Cortex®-M4 | Surface Mount | 512 KB | Internal | 105 °C | -40 °C | |
Microchip Technology | 176 K | 12 b | 8 | 32-Bit Single-Core | FLASH | 3.6 V | 1.62 V | 120 MHz | 64-LQFP (10x10) | DMA I2S POR PWM WDT | 64-LQFP | ARM® Cortex®-M4 | Surface Mount | 512 KB | Internal | 85 °C | -40 °C | 48 |
Microchip Technology | 176 K | 12 b | 8 | 32-Bit Single-Core | FLASH | 3.6 V | 1.62 V | 120 MHz | 64-LQFP (10x10) | DMA I2S POR PWM WDT | 64-LQFP | ARM® Cortex®-M4 | Surface Mount | 512 KB | Internal | 85 °C | -40 °C | 48 |
 Microchip Technology | 176 K | 12 b | 8 | 32-Bit Single-Core | FLASH | 3.6 V | 1.62 V | 120 MHz | 49-WLCSP (2.84x2.84) | DMA I2S POR PWM WDT | 49-UFBGA WLCSP | ARM® Cortex®-M4 | Surface Mount | 512 KB | Internal | 85 °C | -40 °C | |
 Microchip Technology | 176 K | 12 b | 8 | 32-Bit Single-Core | FLASH | 3.6 V | 1.62 V | 120 MHz | 64-LQFP (10x10) | DMA I2S POR PWM WDT | 64-LQFP | ARM® Cortex®-M4 | Surface Mount | 512 KB | Internal | 85 °C | -40 °C | 48 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | T/R | 1 | $ 5.28 | |
| 25 | $ 4.81 | |||
| 100 | $ 4.35 | |||
| 1000 | $ 3.97 | |||
| 5000 | $ 3.80 | |||
Description
General part information
ATSAMG55J19B Series
For new designs, please consider Revision B [ATSAMG55J19B](https://www.microchip.com/en-us/product/atsamg55g19b).
The Microchip's SAM G55 embeds a Cortex-M4 CPU with an FPU (floating point unit). This ensures maximum throughput. This is very important as it allows you to minimize the active power consumption and get to sleep faster in order to reduce the overall power consumption. Additionally, the devices have 30 DMA channels, which give extremely high throughput.
The combination of ultra-low power consumption, fast wake-up time and high throughput is what gives the SAM G the edge in space- and power-constrained consumer applications such as sensor hubs. It wakes up quickly, has the throughput needed to reduce the amount of time spent in active mode, and then goes back to sleep with SRAM retention to conserve energy.
Documents
Technical documentation and resources