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Discrete Semiconductor Products

GC9703-00

Active
Microchip Technology

DIODE SCHOTTKY 8V 10MA CHIP

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Search across all available documentation for this part.

DocumentsGC9700-GC9704
Discrete Semiconductor Products

GC9703-00

Active
Microchip Technology

DIODE SCHOTTKY 8V 10MA CHIP

Deep-Dive with AI

DocumentsGC9700-GC9704

Technical Specifications

Parameters and characteristics for this part

SpecificationGC9703-00
Capacitance @ Vr, F1.2 pF
Current - Average Rectified (Io)10 mA
Current - Reverse Leakage @ Vr100 nA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDie
SpeedAny Speed
Speed200 mA
Supplier Device PackageChip
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]8 V
Voltage - Forward (Vf) (Max) @ If350 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Microchip DirectN/A 1$ 13.93
50$ 13.37
100$ 12.57
250$ 12.01
500$ 11.55
1000$ 11.32

Description

General part information

GC9700-GP-Schottky-RF-Diode Series

This unique mesa construction (GC9700, GC9701, and GC9702) provides high breakdown voltage with true Schottky characteristics without resorting to the use of a diffused guard ring. The GC9703 and GC9704 are planar schottky devices. The standard devices are available in glass axial leaded packages as well as in chip form.

Documents

Technical documentation and resources