No image
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsGC9700-GC9704
Deep-Dive with AI
DocumentsGC9700-GC9704
Technical Specifications
Parameters and characteristics for this part
| Specification | GC9704-UC |
|---|---|
| Capacitance @ Vr, F | 0.8 pF |
| Diode Type | Schottky |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | Die |
| Supplier Device Package | Chip |
| Voltage - Peak Reverse (Max) [Max] | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 3.47 | |
| 50 | $ 3.33 | |||
| 100 | $ 3.13 | |||
| 250 | $ 2.99 | |||
| 500 | $ 2.89 | |||
| 1000 | $ 2.81 | |||
Description
General part information
GC9700-GP-Schottky-RF-Diode Series
This unique mesa construction (GC9700, GC9701, and GC9702) provides high breakdown voltage with true Schottky characteristics without resorting to the use of a diffused guard ring. The GC9703 and GC9704 are planar schottky devices. The standard devices are available in glass axial leaded packages as well as in chip form.
Documents
Technical documentation and resources