
Discrete Semiconductor Products
NDD03N60ZT4G
ObsoleteON Semiconductor
POWER MOSFET 600V 2.6A 3.6 OHM SINGLE N-CHANNEL DPAK
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Discrete Semiconductor Products
NDD03N60ZT4G
ObsoleteON Semiconductor
POWER MOSFET 600V 2.6A 3.6 OHM SINGLE N-CHANNEL DPAK
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Technical Specifications
Parameters and characteristics for this part
| Specification | NDD03N60ZT4G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.6 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 312 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) [Max] | 61 W |
| Rds On (Max) @ Id, Vgs | 3.6 Ohm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NDD03N80Z Series
Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK
Documents
Technical documentation and resources