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onsemi-MJD42C1G GP BJT Trans GP BJT PNP 100V 6A 1750mW 3-Pin(3+Tab) IPAK Tube
Discrete Semiconductor Products

NDD03N40Z-1G

Obsolete
ON Semiconductor

POWER MOSFET 400V 2.1A 3.4 OHM SINGLE N-CHANNEL DPAK

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DocumentsDatasheet
onsemi-MJD42C1G GP BJT Trans GP BJT PNP 100V 6A 1750mW 3-Pin(3+Tab) IPAK Tube
Discrete Semiconductor Products

NDD03N40Z-1G

Obsolete
ON Semiconductor

POWER MOSFET 400V 2.1A 3.4 OHM SINGLE N-CHANNEL DPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationNDD03N40Z-1G
Current - Continuous Drain (Id) @ 25°C2.1 A
Drain to Source Voltage (Vdss)400 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.6 nC
Input Capacitance (Ciss) (Max) @ Vds140 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]37 W
Rds On (Max) @ Id, Vgs3.4 Ohm
Supplier Device PackageIPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NDD03N80Z Series

Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK

Documents

Technical documentation and resources