Power MOSFET 600V 2.6A 3.6 Ohm Single N-Channel DPAK
Power MOSFET 600V 2.6A 3.6 Ohm Single N-Channel DPAK
| Part | Technology | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | MOSFET (Metal Oxide) | IPAK | Through Hole | 400 V | N-Channel | 140 pF | 10 V | 37 W | 3.4 Ohm | -55 °C | 150 °C | 2.1 A | 30 V | 4.5 V | 6.6 nC | IPAK TO-251-3 Short Leads TO-251AA | ||
 ON Semiconductor | MOSFET (Metal Oxide) | DPAK-3 | Surface Mount | 800 V | N-Channel | 440 pF | 10 V | -55 °C | 150 °C | 2.9 A | 30 V | 4.5 V | 17 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 96 W | |||
 ON Semiconductor | MOSFET (Metal Oxide) | DPAK | Surface Mount | 600 V | N-Channel | 312 pF | 10 V | 61 W | 3.6 Ohm | -55 °C | 150 °C | 2.6 A | 30 V | 4.5 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 12 nC | ||
 ON Semiconductor | MOSFET (Metal Oxide) | IPAK | Through Hole | 600 V | N-Channel | 312 pF | 10 V | 61 W | 3.6 Ohm | -55 °C | 150 °C | 2.6 A | 30 V | 4.5 V | IPAK TO-251-3 Short Leads TO-251AA | 12 nC |