Discrete Semiconductor Products

EPC2218A

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TRANS GAN 80V .0032OHM AECQ101

Discrete Semiconductor Products

Active

TRANS GAN 80V .0032OHM AECQ101

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2218A

Current - Continuous Drain (Id) (Ta)	60 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	13.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1570 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	Die
Package Name	Die
Qualification	AEC-Q101
Rds On (Max)	3.2 mOhm
Technology	GaNFET (Gallium Nitride)
Vgs (Max) Positive	6 V
Vgs(th) (Max)	2.5 V

Part	Supplied Contents	Type	Utilized IC / Part	Contents	FET Type	Grade	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Vgs (Max) Positive	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Qualification	Vgs(th) (Max)	Mounting Type	Technology	Package Name	Operating Temperature (Min)	Operating Temperature (Max)
EPC EPC90135	Board(s)	Power Management	EPC2218	Board
EPC EPC2218A					N-Channel	Automotive	80 V	1570 pF	Die	5 V	3.2 mOhm	6 V	13.6 nC	60 A	AEC-Q101	2.5 V	Surface Mount	GaNFET (Gallium Nitride)	Die	-40 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 80 V 60A (Ta) Surface Mount Die

Technical documentation and resources