Discrete Semiconductor Products
STD44N4LF6
ActiveSTMicroelectronics
N-CHANNEL 40 V, 8.9 MOHM, 44 A , DPAK STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET
Discrete Semiconductor Products
STD44N4LF6
ActiveSTMicroelectronics
N-CHANNEL 40 V, 8.9 MOHM, 44 A , DPAK STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STD44N4LF6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 44 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 50 W |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 10608 | $ 1.60 | |
Description
General part information
STD44N4LF6 Series
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Documents
Technical documentation and resources