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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC1127 |
|---|---|
| Current - Supply | 80 mA |
| Frequency [Max] | 50 GHz |
| Frequency [Min] | 2 GHz |
| Gain | 14.5 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 8 dB |
| P1dB | 14 dBm |
| Package / Case | Die |
| RF Type | VSAT |
| Supplier Device Package | Die |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
HMC1127G Series
The HMC1127 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between 2 and 50 GHz. The amplifier provides 14.5 dB of gain, 23 dBm output IP3 and 12.5 dBm of output power at 1 dB gain compression while requiring 80 mA from a +5V supply. The HMC1127 amplifier I/Os are internally matched to 50 Ω facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).APPLICATIONSTest InstrumentationMicrowave Radio & VSATMilitary & SpaceTelecom InfrastructureFiber Optics
Documents
Technical documentation and resources