Catalog
GaAs pHEMT MMIC High Gain Power Amplifier, 2 - 50 GHz
Key Features
• P1dB Output Power: 12.5 dBm
• Psat Output Power: 17.5 dBm
• Gain: 14.5 dB
• Output IP3: 23 dBm
• Supply Voltage: +5 V@80 mA
• 50 Ω Matched Input/Output
• Die Size: 2.7 × 1.45 × 0.1 mm
Description
AI
The HMC1127 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between 2 and 50 GHz. The amplifier provides 14.5 dB of gain, 23 dBm output IP3 and 12.5 dBm of output power at 1 dB gain compression while requiring 80 mA from a +5V supply. The HMC1127 amplifier I/Os are internally matched to 50 Ω facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).APPLICATIONSTest InstrumentationMicrowave Radio & VSATMilitary & SpaceTelecom InfrastructureFiber Optics