Isolators

H11AA4TVM

Active

ON Semiconductor

OPTOCOUPLER, TRANSISTOR, 4.17KV, DIP-6 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN

Isolators

H11AA4TVM

Active

ON Semiconductor

OPTOCOUPLER, TRANSISTOR, 4.17KV, DIP-6 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	H11AA4TVM

Current - DC Forward (If) (Max) [Max]	60 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Min) [Min]	100 %
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Package / Case	6-DIP
Package / Case	10.16 mm
Package / Case	10.16 mm
Supplier Device Package	6-DIP
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.17 V
Voltage - Isolation	4170 Vrms
Voltage - Output (Max) [Max]	30 V

H11AA1M Series

6-Pin DIP AC Input Phototransistor Output Optocoupler

Part	Supplier Device Package	Voltage - Isolation	Mounting Type	Number of Channels	Package / Case	Package / Case	Package / Case	Current Transfer Ratio (Min) [Min]	Voltage - Forward (Vf) (Typ)	Vce Saturation (Max) [Max]	Current - DC Forward (If) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Output (Max) [Max]	Current - Output / Channel	Package / Case
ON Semiconductor H11AA1M	6-DIP	4170 Vrms	Through Hole	1	6-DIP	0.3 in	7.62 mm	20 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA1SM	6-SMD	4170 Vrms	Surface Mount	1	6-SMD Gull Wing			20 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA1TVM	6-DIP	4170 Vrms	Through Hole	1	6-DIP		10.16 mm	20 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA	10.16 mm
ON Semiconductor H11AA4SVM	6-SMD	4170 Vrms	Surface Mount	1	6-SMD Gull Wing			100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA4M	6-DIP	4170 Vrms	Through Hole	1	6-DIP	0.3 in	7.62 mm	100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA4TVM	6-DIP	4170 Vrms	Through Hole	1	6-DIP		10.16 mm	100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA	10.16 mm
ON Semiconductor H11AA4SDM	6-SMD	4170 Vrms	Surface Mount	1	6-SMD Gull Wing			100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA4SR2M	6-SMD	4170 Vrms	Surface Mount	1	6-SMD Gull Wing			100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA4SM	6-SMD	4170 Vrms	Surface Mount	1	6-SMD Gull Wing			100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA4SDM	6-SMD	4170 Vrms	Surface Mount	1	6-SMD Gull Wing			100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 1.04
		10	$ 0.68
		100	$ 0.45
		1000	$ 0.35
		2000	$ 0.33
		5000	$ 0.32
		10000	$ 0.31
		25000	$ 0.30
Newark	Each	1	$ 1.04
		10	$ 0.73
		100	$ 0.54
		500	$ 0.45
		1000	$ 0.42
		3000	$ 0.40
		10000	$ 0.36
ON Semiconductor	N/A	1	$ 0.31

Description

General part information

H11AA1M Series

The H11AAXM series consists of two gallium-arsenideinfrared emitting diodes connected in inverse paralleldriving a single silicon phototransistor output.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet