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Technical Specifications
Parameters and characteristics for this part
| Specification | H11AA1M |
|---|---|
| Current - DC Forward (If) (Max) [Max] | 60 mA |
| Current - Output / Channel | 50 mA |
| Current Transfer Ratio (Min) [Min] | 20 % |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Operating Temperature [Max] | 100 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 6-DIP |
| Package / Case | 0.3 in |
| Package / Case | 7.62 mm |
| Supplier Device Package | 6-DIP |
| Vce Saturation (Max) [Max] | 400 mV |
| Voltage - Forward (Vf) (Typ) | 1.17 V |
| Voltage - Isolation | 4170 Vrms |
| Voltage - Output (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 0.68 | |
| 10 | $ 0.41 | |||
| 100 | $ 0.28 | |||
| 195 | $ 0.92 | |||
| 500 | $ 0.22 | |||
| 1000 | $ 0.22 | |||
| Newark | Each | 1000 | $ 0.23 | |
| ON Semiconductor | N/A | 1 | $ 0.24 | |
Description
General part information
H11AA1M Series
The H11AAXM series consists of two gallium-arsenideinfrared emitting diodes connected in inverse paralleldriving a single silicon phototransistor output.
Documents
Technical documentation and resources