H11AA1M Series

6-Pin DIP AC Input Phototransistor Output Optocoupler

Catalog

6-Pin DIP AC Input Phototransistor Output Optocoupler

Part	Supplier Device Package	Voltage - Isolation	Mounting Type	Number of Channels	Package / Case	Package / Case	Package / Case	Current Transfer Ratio (Min) [Min]	Voltage - Forward (Vf) (Typ)	Vce Saturation (Max) [Max]	Current - DC Forward (If) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Output (Max) [Max]	Current - Output / Channel	Package / Case
ON Semiconductor H11AA1M	6-DIP	4170 Vrms	Through Hole	1	6-DIP	0.3 in	7.62 mm	20 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA1SM	6-SMD	4170 Vrms	Surface Mount	1	6-SMD Gull Wing			20 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA1TVM	6-DIP	4170 Vrms	Through Hole	1	6-DIP		10.16 mm	20 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA	10.16 mm
ON Semiconductor H11AA4SVM	6-SMD	4170 Vrms	Surface Mount	1	6-SMD Gull Wing			100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA4M	6-DIP	4170 Vrms	Through Hole	1	6-DIP	0.3 in	7.62 mm	100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA4TVM	6-DIP	4170 Vrms	Through Hole	1	6-DIP		10.16 mm	100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA	10.16 mm
ON Semiconductor H11AA4SDM	6-SMD	4170 Vrms	Surface Mount	1	6-SMD Gull Wing			100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA4SR2M	6-SMD	4170 Vrms	Surface Mount	1	6-SMD Gull Wing			100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA4SM	6-SMD	4170 Vrms	Surface Mount	1	6-SMD Gull Wing			100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA
ON Semiconductor H11AA4SDM	6-SMD	4170 Vrms	Surface Mount	1	6-SMD Gull Wing			100 %	1.17 V	400 mV	60 mA	100 °C	-40 °C	30 V	50 mA

Catalog

6-Pin DIP AC Input Phototransistor Output Optocoupler

Key Features

• Bi-polar emitter input

• Built-in reverse polarity input protection

• Underwriters Laboratory (UL) recognized File#E90700, Volume 2

• VDE approved File #102497 (ordering option ‘V’)

Description

The H11AAXM series consists of two gallium-arsenideinfrared emitting diodes connected in inverse paralleldriving a single silicon phototransistor output.