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Discrete Semiconductor Products

NXV08H300DT1

Active
ON Semiconductor

DUAL HALF BRIDGE AUTOMOTIVE POWER MOSFET MODULE, APM17

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Discrete Semiconductor Products

NXV08H300DT1

Active
ON Semiconductor

DUAL HALF BRIDGE AUTOMOTIVE POWER MOSFET MODULE, APM17

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNXV08H300DT1
Configuration4 N-Channel
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs502 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds30150 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / Case1.39 in
Package / Case17-PowerDIP Module
Package / Case35.3 mm
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs0.58 mOhm
Rds On (Max) @ Id, Vgs0.765 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 40$ 62.85
NewarkEach 25$ 79.05
50$ 76.95
100$ 74.43
250$ 71.91
ON SemiconductorN/A 1$ 56.06

Description

General part information

NXV08H250DPT2 Series

80V 0.71mΩ Automotive Dual Half Bridge Mosfet Power module for 6 phase inverter for 48V mild hybrid vehicle, with pressfit signal pins, electrically isolated DBC substrate, temp sense and Automotive Qualified.

Documents

Technical documentation and resources