NXV08H250DPT2 Series

Automotive 80V Dual Half Bridge Mosfet Module with pressfit signal pins, APM17

Catalog

Automotive 80V Dual Half Bridge Mosfet Module with pressfit signal pins, APM17

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Qualification	Technology	Grade	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case	Mounting Type	Operating Temperature	Package / Case	Rds On (Max) @ Id, Vgs	Package / Case	Rds On (Max) @ Id, Vgs
ON Semiconductor NXV08H250DPT2	80 V	APM17-MFA	AEC-Q101	MOSFET (Metal Oxide)	Automotive	4 N-Channel	125 °C	-40 °C	24350 pF	4.6 V	320 nC	2.02 in 51.3 mm	17-PowerDIP Module	Through Hole
ON Semiconductor NXV08H400XT2	80 V	APM17-MDA	AEC-Q101	MOSFET (Metal Oxide)	Automotive	4 N-Channel			30150 pF	4.6 V	502 nC	1.778 in	17-PowerDIP Module	Through Hole	175 °C	45.15 mm	0.71 mOhm 0.765 mOhm
ON Semiconductor NXV08H300DT1	80 V		AEC-Q101	MOSFET (Metal Oxide)	Automotive	4 N-Channel			30150 pF	4.6 V	502 nC		17-PowerDIP Module	Through Hole	175 °C	1.39 in	0.765 mOhm	35.3 mm	0.58 mOhm

Catalog

Automotive 80V Dual Half Bridge Mosfet Module with pressfit signal pins, APM17

Key Features

• 2 Phase MOSFET Module At Customer Side this Module Can Be Used as 1/2 Bridge MOSFET Module by Combining 2 Phase Out Power Terminals

• Electrically Isolated DBC Substrate for Low Rthjc

• Compact Design for Low Total Module Resistance

• Module Serialization for Full Traceability

• Module Level AQG324 Qualified. Components Inside are AEC Q101 (MOSFET) & AEC Q200 (Passives) Qualified

• UL 94 V−0 Compliant

• This Device is Pb−Free and is RoHS Compliant

Description

80V 0.71mΩ Automotive Dual Half Bridge Mosfet Power module for 6 phase inverter for 48V mild hybrid vehicle, with pressfit signal pins, electrically isolated DBC substrate, temp sense and Automotive Qualified.